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The electron irradiation effects on silicon gate dioxide used for power MOS devices
M. Badila, Ph. Godignon, J. Millan, S. Berberich, G. BrezeanuVolume:
41
Year:
2001
Language:
english
Pages:
4
DOI:
10.1016/s0026-2714(01)00060-9
File:
PDF, 129 KB
english, 2001