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Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4–3 nm)
R. Clerc, A.S. Spinelli, G. Ghibaudo, C. Leroux, G. PananakakisVolume:
41
Year:
2001
Language:
english
Pages:
4
DOI:
10.1016/s0026-2714(01)00063-4
File:
PDF, 269 KB
english, 2001