Low frequency noise and reliability properties pf 0.12 μm...

Microelectronics Reliability 2001 Vol. 41; Iss. 9-10

Low frequency noise and reliability properties pf 0.12 μm CMOS devices with Ta2O5 as gate dielectrics

M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo
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Volume:
41
Year:
2001
Pages:
6
DOI:
10.1016/s0026-2714(01)00141-x
File:
PDF, 295 KB
2001
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