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The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors
N. Tošić Golo, S. van der Wal, F.G. Kuper, T. MouthaanVolume:
41
Year:
2001
Pages:
6
DOI:
10.1016/s0026-2714(01)00148-2
File:
PDF, 383 KB
2001