Analysis of high-power devices using proton beam induced...

Microelectronics Reliability 2001 Vol. 41; Iss. 9-10

Analysis of high-power devices using proton beam induced charge microscopy

M. Zmeck, J. Phang, A. Bettiol, T. Osipowicz, F. Watt, L. Balk, F.-J. Niedernostheide, H.-J. Schulze, E. Falck, R. Barthelmess
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Volume:
41
Year:
2001
Pages:
6
DOI:
10.1016/s0026-2714(01)00159-7
File:
PDF, 578 KB
2001
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