Mechanisms of spontaneous recovery in positive gate bias...

Microelectronics Reliability 2002 Vol. 42; Iss. 9-11

Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs

N. Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, D. Dankovic, S. Golubovic, S. Dimitrijev
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Volume:
42
Year:
2002
Pages:
4
DOI:
10.1016/s0026-2714(02)00171-3
File:
PDF, 813 KB
2002
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