Electrical field mapping in InGaP HEMTs and GaAs terahertz...

Microelectronics Reliability 2002 Vol. 42; Iss. 9-11

Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique.

D. Pogany, J. Kuzmik, J. Darmo, M. Litzenberger, S. Bychikhin, K. Unterrainer, Z. Mozolova, S. Hascik, T. Lalinsky, E. Gornik
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Volume:
42
Year:
2002
Pages:
5
DOI:
10.1016/s0026-2714(02)00210-x
File:
PDF, 946 KB
2002
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