Influence of nitradation in ultra-thin oxide on the gate...

Microelectronics Reliability 2003 Vol. 43; Iss. 9-11

Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices

M. Fadlallah, C. Petit, A. Meinertzhagen, G. Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader
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Volume:
43
Year:
2003
Pages:
6
DOI:
10.1016/s0026-2714(03)00255-5
File:
PDF, 709 KB
2003
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