High Electric Field Induced Degradation of the DC...

Microelectronics Reliability 2003 Vol. 43; Iss. 9-11

High Electric Field Induced Degradation of the DC Characteristics in Si/SiGe HEMT’s

J. Kuchenbecker, M. Borgarino, M. Zeuner, U. König, R. Plana, F. Fantini
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Volume:
43
Year:
2003
Pages:
5
DOI:
10.1016/s0026-2714(03)00341-x
File:
PDF, 1.14 MB
2003
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