New understanding of LDD NMOS hot-carrier degradation and...

Microelectronics Reliability 1997 Vol. 37; Iss. 10-11

New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures

Janet Wang-Ratkovic, Ronald C. Lacoe, Kenneth P. MacWilliams, Miryeong Song, Stephanie Brown, Garenn Yabiku
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Volume:
37
Year:
1997
Language:
english
Pages:
8
DOI:
10.1016/s0026-2714(97)00153-4
File:
PDF, 710 KB
english, 1997
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