A new threshold voltage model for deep-submicron MOSFETs...

Microelectronics Reliability 1998 Vol. 38; Iss. 9

A new threshold voltage model for deep-submicron MOSFETs with nonuniform substrate dopings

Wen-liang Zhang, Zhi-lian Yang
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Volume:
38
Year:
1998
Language:
english
Pages:
5
DOI:
10.1016/s0026-2714(98)00042-0
File:
PDF, 266 KB
english, 1998
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