New rapid method for lifetime determination of gate oxide...

Microelectronics Reliability 1999 Vol. 39; Iss. 6-7

New rapid method for lifetime determination of gate oxide validated with bipolar/CMOS/DMOS technology

X. Gagnard, M. Taurin, O. Bonnaud
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Volume:
39
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0026-2714(99)00098-0
File:
PDF, 717 KB
english, 1999
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