Reliability improvement of EEPROM by using WSi2 polycide...

Microelectronics Reliability 1999 Vol. 39; Iss. 6-7

Reliability improvement of EEPROM by using WSi2 polycide gate

K. Ogier-Monnier, Ph. Boivin, O. Bonnaud
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Volume:
39
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0026-2714(99)00120-1
File:
PDF, 347 KB
english, 1999
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