On stress induced leakage current in 5 and 3 nm thick...

Microelectronics Reliability 2000 Vol. 40; Iss. 4-5

On stress induced leakage current in 5 and 3 nm thick oxides

A Meinertzhagen, D Zander, C Petit, M Jourdain, D Gogenheim
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Volume:
40
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0026-2714(99)00277-2
File:
PDF, 157 KB
english, 2000
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