A recombination model for transient and stationary...

Microelectronics Reliability 2000 Vol. 40; Iss. 4-5

A recombination model for transient and stationary stress-induced leakage current

D Ielmini, A.S Spinelli, A.L Lacaita, A Martinelli, G Ghidini
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Volume:
40
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0026-2714(99)00280-2
File:
PDF, 204 KB
english, 2000
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