Comparison of oxide leakage currents induced by ion...

Microelectronics Reliability 2000 Vol. 40; Iss. 4-5

Comparison of oxide leakage currents induced by ion implantation and high field electric stress

D Goguenheim, A Bravaix, J.M Moragues, P Lambert, P Boivin
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Volume:
40
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0026-2714(99)00303-0
File:
PDF, 233 KB
english, 2000
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