Void-Free Bonded SOI Substrates for High-Voltage,...

Japanese Journal of Applied Physics 1995 / 2 Vol. 34; Iss. Part 1, No

Void-Free Bonded SOI Substrates for High-Voltage, High-Current Vertical DMOS-Type Power ICs

Hamajima, Tomohiro, Kobayashi, Kenya, Kikuchi, Hiroaki, Okonogi, Kensuke, Arai, Kenichi, Ninomiya, Yasuhito, Takahashi, Mitsuasa
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Volume:
34
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.34.848
Date:
February, 1995
File:
PDF, 1.14 MB
1995
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