[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Electrical Properties of High-k ALD HfO2 Deposited on Strained Si Layers Epitaxially Grown on Si0.8Ge0.2/Si Substrates
Shrestha, Pragya R., Gu, Diefeng, Tapily, Kandabara, Baumgart, H.Volume:
16
Year:
2008
Language:
english
DOI:
10.1149/1.2979980
File:
PDF, 584 KB
english, 2008