Effects of annealing time on the electrical properties of the Y 2 O 3 gate on silicon
Quah, Hock Jin, Cheong, Kuan YewVolume:
10
Language:
english
Journal:
Journal of Experimental Nanoscience
DOI:
10.1080/17458080.2013.781689
Date:
January, 2015
File:
PDF, 416 KB
english, 2015