PolySi-SiO[sub 2]-ZrO[sub 2]-SiO[sub 2]-Si Flash Memory Incorporating a Sol-Gel-Derived ZrO[sub 2] Charge Trapping Layer
Hsu, Tzu-Hsiang, You, Hsin-Chiang, Ko, Fu-Hsiang, Lei, Tan-FuVolume:
153
Year:
2006
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2337846
File:
PDF, 102 KB
english, 2006