Electric Field Reduction in C-Doped AlGaN/GaN on Si High...

IEEE Electron Device Letters 2015 / 8 Vol. 36; Iss. 8

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Uren, Michael J., Caesar, Markus, Karboyan, Serge, Moens, Peter, Vanmeerbeek, Piet, Kuball, Martin
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2442293
Date:
August, 2015
File:
PDF, 421 KB
english, 2015
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