A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors
Taur, Yuan, Chen, Han-Ping, Xie, Qian, Ahn, Jaesoo, McIntyre, Paul C., Lin, Dennis, Vais, Abhitosh, Veksler, DmitryVolume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2015.2389805
Date:
March, 2015
File:
PDF, 2.82 MB
english, 2015