Relaxation of electrons following trapping in the...

Philosophical Magazine Letters 2002 / 05 Vol. 82; Iss. 5

Relaxation of electrons following trapping in the space-charge-limited conduction regime of n + -i-n + hydrogenated amorphous silicon structures

Meaudre, R., Meaudre, M.
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Volume:
82
Language:
english
Journal:
Philosophical Magazine Letters
DOI:
10.1080/09500830210127020
Date:
May, 2002
File:
PDF, 280 KB
english, 2002
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