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[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - GaN HEMTs on Si substrate with high cutoff frequency
Jatal, W., Tonisch, K., Baumann, U., Schwierz, F., Pezoldt, J.Year:
2014
Language:
english
DOI:
10.1109/ASDAM.2014.6998660
File:
PDF, 109 KB
english, 2014