Reduction of Current Collapse in GaN High-Electron Mobility...

IEEE Electron Device Letters 2015 / 8 Vol. 36; Iss. 8

Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

Lin, Shuxun, Wang, Maojun, Xie, Bing, Wen, Cheng P., Yu, Min, Wang, Jinyan, Hao, Yilong, Wu, Wengang, Huang, Sen, Chen, Kevin J., Shen, Bo
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2445495
Date:
August, 2015
File:
PDF, 745 KB
english, 2015
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