ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Using Fluorine-Ion Implanted a-Si Layer to Reduce Ni Contamination and Passivate the Defects in NILC Poly-Si
Chen, Chien-Chih, Wu, YewChung S.Year:
2010
Language:
english
DOI:
10.1149/1.3481231
File:
PDF, 187 KB
english, 2010