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Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy
Kaun, Stephen W, Mazumder, Baishakhi, Fireman, Micha N, Kyle, Erin C H, Mishra, Umesh K, Speck, James SVolume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/5/055010
Date:
May, 2015
File:
PDF, 1.17 MB
english, 2015