[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Engineering Band-Edge High-κ/Metal Gate n-MOSFETs with Cap Layers Containing Group IIA and IIIB Elements by Atomic Layer Deposition
Jagannathan, Hemanth, Edge, Lisa F., Jamison, Paul, Iijima, Ryosuke, Narayanan, Vijay, Paruchuri, Vamsi K., Clark, Robert, Consiglio, Steven, Wajda, Cory, Leusink, GertYear:
2009
Language:
english
DOI:
10.1149/1.3118951
File:
PDF, 1.80 MB
english, 2009