Effect of SiGe channel on pFET variability in 32 nm...

Electronics Letters 2012 Vol. 48; Iss. 5

Effect of SiGe channel on pFET variability in 32 nm technology

Yuan, X., Zhang, Q., Tran, H., Fox, S., Sherony, M.
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Volume:
48
Year:
2012
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el.2011.3830
File:
PDF, 131 KB
english, 2012
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