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Universal relaxation characteristic of interface trap under FN and NBTI stress in pMOSFET device
Park, Young June, Baek, Chang-Ki, Park, Sooyoung, Choi, SeongwookVolume:
50
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el.2014.3069
Date:
November, 2014
File:
PDF, 211 KB
english, 2014