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Temperature dependence of the breakdown voltage for reverse-biased GaN p–n–n+ diodes
R.L. Aggarwal, I. Melngailis, S. Verghese, R.J. Molnar, M.W. Geis, L.J. MahoneyVolume:
117
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0038-1098(00)00513-5
File:
PDF, 279 KB
english, 2001