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Measurements of the widths of transition regions at Si–SiO2 interfaces in metal-oxide–semiconductor structures from quantum oscillations in Fowler–Nordheim tunneling current
Lingfeng Mao, Changhua Tan, Mingzhen XuVolume:
119
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0038-1098(01)00221-6
File:
PDF, 89 KB
english, 2001