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High temperature (>400 K) ferromagnetism in III–V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy
Masahiko Hashimoto, Yi-Kai Zhou, Masahito Kanamura, Hajime AsahiVolume:
122
Year:
2002
Language:
english
Pages:
3
DOI:
10.1016/s0038-1098(02)00073-x
File:
PDF, 68 KB
english, 2002