Thirty-Day-Long Data Retention in Ferroelectric-Gate...

Japanese Journal of Applied Physics 2005 / 8 Vol. 44; Iss. 8

Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO 2 Buffer Layers

Takahashi, Kazuhiro, Aizawa, Koji, Park, Byung-Eun, Ishiwara, Hiroshi
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.6218
Date:
August, 2005
File:
PDF, 158 KB
english, 2005
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