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Low temperature photoluminescence properties of InGaN films grown on (0 1 1 2) Al2O3 and (0 0 0 1) Al2O3 substrates by low pressure MOVPE
Tong Yuzhen, Zhang Guoyi, Jin Sixuan, Yang Zhijian, Dang Xiaozhong, Wang ShuminVolume:
102
Year:
1997
Language:
english
Pages:
4
DOI:
10.1016/s0038-1098(97)00006-9
File:
PDF, 371 KB
english, 1997