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Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors
Hahn, Herwig, Reuters, Benjamin, Geipel, Sascha, Schauerte, Meike, Benkhelifa, Fouad, Ambacher, Oliver, Kalisch, Holger, Vescan, AndreiVolume:
117
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4913857
Date:
March, 2015
File:
PDF, 1.39 MB
english, 2015