The effect of N2 plasma damage on AlGaAs/InGaAs/GaAs high...

Solid-State Electronics 2000 Vol. 44; Iss. 12

The effect of N2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics

V.P Trivedi, C.H Hsu, B Luo, X Cao, J.R LoRache, F Ren, S.J Pearton, C.R Abernathy, E Lambers, M Hoppe, C.S Wu, J Sasserath, J.W Lee, K Mackenzie
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Volume:
44
Year:
2000
Language:
english
Pages:
8
DOI:
10.1016/s0038-1101(00)00150-7
File:
PDF, 579 KB
english, 2000
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