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Effects of proton implantation on electrical and recombination properties of n-GaN
A.Y Polyakov, A.S Usikov, B Theys, N.B Smirnov, A.V Govorkov, F Jomard, N.M Shmidt, W.V LundinVolume:
44
Year:
2000
Language:
english
Pages:
13
DOI:
10.1016/s0038-1101(00)00159-3
File:
PDF, 644 KB
english, 2000