Ballistic electron emission microscopy studies of the...

Solid-State Electronics 2000 Vol. 44; Iss. 12

Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction

Shiyang Zhu, Xin-Ping Qu, R.L.Van Meirhaeghe, C. Detavernier, Guo-Ping Ru, F. Cardon, Bing-Zong Li
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Volume:
44
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0038-1101(00)00195-7
File:
PDF, 305 KB
english, 2000
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