A process simplification scheme for fabricating...

Solid-State Electronics 2001 Vol. 45; Iss. 1

A process simplification scheme for fabricating self-aligned silicided trench-gate power MOSFETs

M.H Juang, L.C Sun, W.T Chen, C.I Ou-Yang
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Volume:
45
Year:
2001
Language:
english
Pages:
4
DOI:
10.1016/s0038-1101(00)00246-x
File:
PDF, 122 KB
english, 2001
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