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A process simplification scheme for fabricating self-aligned silicided trench-gate power MOSFETs
M.H Juang, L.C Sun, W.T Chen, C.I Ou-YangVolume:
45
Year:
2001
Language:
english
Pages:
4
DOI:
10.1016/s0038-1101(00)00246-x
File:
PDF, 122 KB
english, 2001