Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy
D. Huang, F. Yun, M.A. Reshchikov, D. Wang, H. Morkoç, D.L. Rode, L.A. Farina, Ç. Kurdak, K.T. Tsen, S.S. Park, K.Y. LeeVolume:
45
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0038-1101(01)00088-0
File:
PDF, 180 KB
english, 2001