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The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs
S.A. Suliman, O.O. Awadelkarim, S.J. Fonash, G.M. Dolny, J. Hao, R.S. Ridley, C.M. KnoedlerVolume:
45
Year:
2001
Language:
english
Pages:
7
DOI:
10.1016/s0038-1101(01)00124-1
File:
PDF, 165 KB
english, 2001