Worst-case analysis and statistical simulation of MOSFET...

Solid-State Electronics 2001 Vol. 45; Iss. 9

Worst-case analysis and statistical simulation of MOSFET devices based on parametric test data

Qiang Zhang, Juin J. Liou, John McMacken, J. Ross Thomson, Kevin Stiles, Paul Layman
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
45
Year:
2001
Language:
english
Pages:
11
DOI:
10.1016/s0038-1101(01)00177-0
File:
PDF, 1.13 MB
english, 2001
Conversion to is in progress
Conversion to is failed