A study of noise in surface and buried channel SiGe MOSFETs with gate oxide grown by low temperature plasma anodization
N.B Lukyanchikova, M.V Petrichuk, N.P Garbar, L.S Riley, S HallVolume:
46
Year:
2002
Language:
english
Pages:
9
DOI:
10.1016/s0038-1101(02)00175-2
File:
PDF, 536 KB
english, 2002