Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors
M.A. Mastro, D. Tsvetkov, V. Soukhoveev, A. Usikov, V. Dmitriev, B. Luo, F. Ren, K.H. Baik, S.J. PeartonVolume:
47
Year:
2003
Language:
english
Pages:
5
DOI:
10.1016/s0038-1101(02)00473-2
File:
PDF, 368 KB
english, 2003