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Effects of base structure on performance of GaN-based heterojunction bipolar transistors
K.P Lee, F Ren, S.J Pearton, A.M Dabiran, P.P ChowVolume:
47
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(03)00002-9
File:
PDF, 310 KB
english, 2003