GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
J.R. LaRoche, B. Luo, F. Ren, K.H. Baik, D. Stodilka, B. Gila, C.R. Abernathy, S.J. Pearton, A. Usikov, D. Tsvetkov, V. Soukhoveev, G. Gainer, A. Rechnikov, V. Dimitriev, G.-T. Chen, C.-C. Pan, J.-I.Volume:
48
Year:
2004
Language:
english
Pages:
4
DOI:
10.1016/s0038-1101(03)00290-9
File:
PDF, 303 KB
english, 2004