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Effects of temperature variation (300–600 K) in MOSFET modeling in 6H–silicon carbide
Md. Hasanuzzaman, Syed K. Islam, Leon M. TolbertVolume:
48
Year:
2004
Language:
english
Pages:
8
DOI:
10.1016/s0038-1101(03)00293-4
File:
PDF, 336 KB
english, 2004