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High rate etching of SiC and SiCN in NF3 inductively coupled plasmas
J.J Wang, E.S Lambers, S.J Pearton, M Ostling, C.-M Zetterling, J.M Grow, F RenVolume:
42
Year:
1998
Language:
english
Pages:
5
DOI:
10.1016/s0038-1101(97)00297-9
File:
PDF, 274 KB
english, 1998