A high performance 0.15 μm buried channel pMOSFET with...

Solid-State Electronics 1999 Vol. 43; Iss. 7

A high performance 0.15 μm buried channel pMOSFET with extremely shallow counter doped channel region using solid phase diffusion

Takashi Yoshitomi, Hideki Oguma, Tatsuya Ohguro, Eiji Morifuji, Toyota Morimoto, Hisayo Sasaki Momose, Hideki Kimijima, Yasuhiro Katsumata, Hiroshi Iwai
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Volume:
43
Year:
1999
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(99)00054-4
File:
PDF, 137 KB
english, 1999
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